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| Data Sheet No. 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV Features: * * * * General-purpose low-power NPN silicon transistor. Housed in TO-72 case. Also available in chip form using the 0013 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/301 which Semicoa meets in all cases. Generic Part Number: 2N918 REF: MIL-PRF-19500/301 TO-72 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 25oC Power Dissipation, TA = 25oC Derate above 25 C Operating Junction Temperature Storage Temperature o o Symbol VCEO VCBO VEBO IC PT Rating 15 30 3.0 50 200 1.14 Unit V V V mA mW mW/oC mW mW/ C o o PT 300 1.71 TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N918 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 1.0 A Collector-Emitter Breakdown Voltage IC = 3.0 mA Emitter-Base Breakdown Voltage IC = 10 A Collector-Base Cutoff Current VCB = 25 V Collector-Base Cutoff Current VCB = 25 V, TA = 150oC Emitter-Base Cutoff Current VEB = 2.5 V Symbol V(BR)CBO V(BR)CEO V(BR)CEO ICBO1 ICBO2 IEBO Min 30 15 3.0 3.0 ----- Max ------10 1 10 Unit V V V nA A nA ON Characteristics Forward Current Transfer Ratio IC = 500 A, VCE = 10 V IC = 3.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 10 V IC = 3.0 mA, VCE = 1.0 V, TC = -55 C Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA o Symbol hFE1 hFE2 hFE3 hFE4 VBE(sat) VCE(sat) Min 10 20 20 10 ----- Max --200 ----1.0 0.4 Unit --------V dc V dc Small Signal Characteristics Magnitude of Common Emitter, Small Signal, Short Circuit Symbol |hFE| NF GPE rb'Cc po n COBO1 COBO2 CIBO Min 6.0 --15 ------------- Max 18 6.0 --25 30 25 3.0 1.7 2.0 Unit --dB dB ps mW --pF pF pF Forward Current Transfer Ratio VCE = 10 V, IC = 4.0 mA, f = 100 MHz Noise Figure VCE = 6 V, IC = 1.0 mA, f = 60 MHz Small Signal Power Gain VCB = 12 V, IC = 6.0 mA, f = 200 MHz Collector - Base Time Constant VCB = 10 V, IE = -4.0 mA, f = 79.8 MHz Oscillator Power Output VCB = 15 V, IC = 8.0 mA, f > 500 MHz Collector Efficiency VCB = 15 V, IC = 8.0 mA, f > 500 MHz Open Circuit Output Capacitance VCB = 0 V, IE = 0, 100 kHz < f < 1 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz |
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